product specification website o www.jmnic.com silicon npn power transistor 2SC2166 description ? high power gain- : g pe ?y 13.8db @f= 27mhz, p o = 6w; v cc = 12v ? high reliability applications ? designed for 3 to 4 watts output power amplifiers in hf band mobile radio applications. absolute maximum ratings (t a =25 ?? ) symbol parameter value unit v cbo collector-base voltage 45 v v cer collector-emitter voltage r be = 10 |? 45 v v ebo emitter-base voltage 4 v i c collector current 4 a collector power dissipation @t c =25 ?? 12.5 p c collector power dissipation @t a =25 ?? 1.5 w t j junction temperature 150 ?? t stg storage temperature range -55~150 ?? thermal characteristics symbol parameter max unit r th j-a thermal resistance,junction to ambient 83 ?? /w r th j-c thermal resistance,junction to case 10 ?? /w
product specification website o www.jmnic.com silicon npn power transistor 2SC2166 electrical characteristics t c =25 ?? unless otherwise specified symbol parameter conditions min typ. max unit v (br)cbo collector-base breakdown voltage i c = 1ma, i e = 0 45 v v (br)cer collector-emitter breakdown voltage i c = 10ma; r be = 10 |? 45 v v (br)ebo emitter-base breakdown voltage i e = 1ma, i c = 0 4 v i cbo collector cutoff current v cb = 30v; i e = 0 0.1 ma i ebo emitter cutoff current v eb = 3v; i c = 0 0.1 ma h fe dc current gain i c = 0.1a; v ce = 10v 35 180 p o output power 6 7.5 w |? c collector efficiency v cc = 12v; p in = 0.25w; f= 27mhz 55 60 %
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